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www.irf.com 1 8/18/08 irf8788pbf hexfet power mosfet notes through are on page 9 benefits very low gate charge very low r ds(on) at 4.5v v gs ultra-low gate impedance fully characterized avalanche voltage and current 20v v gs max. gate rating 100% tested for rg lead-free applications synchronous mosfet for notebook processor power synchronous rectifier mosfet for isolated dc-dc converters top view 8 12 3 4 5 6 7 d d d d g s a s s a so-8 description the irf8788pbf incorporates the latest hexfet power mosfet silicon technology into the industry standard so-8 package. the irf8788pbf has been optimized for parameters that are critical in synchronous buck operation including rds(on) and gate charge to reduce both conduction and switching losses. the reduced total losses make this product ideal for high efficiency dc-dc converters that power the latest generation of processors for notebook and netcom applications. 97137a absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead CCC 20 r ja junction-to-ambient CCC 50 c/w va w c max. 2419 190 20 30 -55 to + 150 2.5 0.02 1.6 v dss r ds(on) max qg 30v 2.8m @v gs = 10v 44nc downloaded from: http:///
2 www.irf.com s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 CCC CCC v ? v dss / t j breakdown voltage temp. coefficient CCC 0.024 CCC v/c r ds ( on ) static drain-to-source on-resistance CCC 2.3 2.8 CCC 3.04 3.8 v gs ( th ) gate threshold voltage 1.35 1.80 2.35 v v gs ( th ) gate threshold voltage coefficient CCC -6.59 CCC mv/c i dss drain-to-source leakage current CCC CCC 1.0 CCC CCC 150 i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 gfs forward transconductance 95 CCC CCC s q g total gate charge CCC 44 66 q g s1 pre-vth gate-to-source charge CCC 12 CCC q g s2 post-vth gate-to-source charge CCC 4.7 CCC q g d gate-to-drain charge CCC 14 CCC q g odr gate charge overdrive CCC 13.3 CCC see figs. 17a & 17b q sw switch charge (q g s2 + q g d ) CCC 18.7 CCC q oss output charge CCC 22 CCC nc r g gate resistance CCC 0.54 1.09 t d ( on ) turn-on delay time CCC 23 CCC t r rise time CCC 24 CCC t d ( off ) turn-off delay time CCC 23 CCC t f fall time CCC 11 CCC c iss input capacitance CCC 5720 CCC c oss output capacitance CCC 980 CCC c rss reverse transfer capacitance CCC 450 CCC avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current CCC CCC (body diode) i sm pulsed source current CCC CCC (body diode) v sd diode forward voltage CCC CCC 1.0 v CCC CCC 0.75 v t rr reverse recovery time CCC 24 36 ns q rr reverse recovery charge CCC 33 50 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) m a 3.1 190 a CCC i d = 19a v gs = 0v v ds = 15v nc ns pf v gs = 4.5v, i d = 19a v gs = 4.5v typ. CCC v ds = v gs , i d = 100 a r g = 1.8 v ds = 15v, i d = 19a v ds = 24v, v gs = 0v, t j = 125c a na t j = 25c, i f = 19a, v dd = 15v di/dt = 230a/ s t j = 25c, i s = 19a, v gs = 0v showing the integral reverse p-n junction diode. t j = 25c, i s = 2.2a, v gs = 0v mosfet symbol v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v i d = 19a v ds = 15v v gs = 20v v gs = -20v v ds = 24v, v gs = 0v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 24a conditions see fig. 15a & 15b max. 230 19 ? = 1.0mhz downloaded from: http:///
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 2 3 4 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 24a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.3v 60 s pulse width tj = 150c vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v 60 s pulse width tj = 25c 2.3v downloaded from: http:///
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 q g , total gate charge (nc) 0 4 8 12 16 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 19a 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c tj = 150c single pulse 100 sec 10msec 1msec downloaded from: http:///
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. ambient temperature fig 10. threshold voltage vs. temperature 25 50 75 100 125 150 t a , ambient temperature (c) 0 4 8 12 16 20 24 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc ri (c/w) ? (sec) 0.0141064 0.000057 0.0210000 0.000286 0.2184000 0.000375 0.8204000 0.001902 4.7558194 0.004544 0.4648000 0.013931 28.9076170 0.038563 15.1191958 2.069546 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri c i = i / ri a 4 4 r 4 r 4 5 5 r 5 r 5 6 6 r 6 r 6 7 7 r 7 r 7 8 8 r 8 r 8 -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.5 2.0 2.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a i d = 100 a downloaded from: http:///
6 www.irf.com fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 15b. switching time waveforms fig 15a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f
1 0.1 % + - fig 14b. unclamped inductive waveforms t p v (br)dss i as fig 14a. unclamped inductive test circuit r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v 2.0 4.0 6.0 8.0 10.0 v gs , gate-to-source voltage (v) 2 3 4 5 6 7 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) t j = 25c t j = 125c i d = 19a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 800 1000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 6.4a 7.4a bottom 19a downloaded from: http:///
www.irf.com 7 fig 16.

for n-channel hexfet power mosfets ? ? ? ! p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
+ - + + + - - - ? "# $ % ? " ! & '('' ? $ )) ? '('' * " ( fig 17a. gate charge test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 17b. gate charge waveform 1k vcc dut 0 l s 20k downloaded from: http:///
8 www.irf.com so-8 package outlinedimensions are shown in milimeters (inches) so-8 part marking information p = disgnates lead - free e xample: t his is an irf7101 (mos fet ) f7101 xxxx international logo rectifier part number lot code product (optional) dat e code (yww) y = las t digit of t he year ww = week a = assembly site code e1 de y b aa1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max mil l ime t e r s inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] cab e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 8x 1.78 [ .070 ] 4. out line conforms t o jedec out line ms -012aa. not es : 1. dimens ioning & t olerancing per as me y14.5m-1994. 2. cont rolling dimens ion: millimet er 3. dimens ions are s hown in millime t ers [inches ]. 5 dimens ion does not include mold prot rus ions . 6 dimens ion does not include mold prot rus ions . mold prot rus ions not t o excee d 0.25 [.010]. 7 dimens ion is t he lengt h of le ad f or s oldering t o a s ubs t rat e. mold prot rus ions not t o excee d 0.15 [.006]. note: for the most current drawing please refer to ir website at http://www .irf.com/package/ downloaded from: http:///
www.irf.com 9
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 1.25mh, r g = 25 , i as = 19a. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board. r is measured at
data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/08 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reeldimensions are shown in milimeters (inches) note: for the most current drawing please refer to ir website at http://www .irf.com/package/ downloaded from: http:///

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